Design and Implementation of Beam Control System Based on FPGASu, Youbang
doi: 10.1088/1742-6596/2645/1/012007pmid: N/A
As the use of phased array technology becomes more widespread, it is receiving increased attention. Among them, the excellent performance of the beam control system will directly affect the performance of the whole phased array. FPGA is the preferred control chip for developing a beam control system. Therefore, this paper designs a beam control system architecture based on FPGA, designs the main functional modules of the system in detail, and conducts simulation experiments on its important functions. The results show that the system can quickly and accurately calculate the phase shift code required by the antenna unit to achieve fast beam response.
A 10-bit 160 MS/s Asynchronous SAR ADC designWang, Jiaqi
doi: 10.1088/1742-6596/2645/1/012001pmid: N/A
This study describes a 10-bit 160 MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) design in a 40 nm CMOS technical process. The SAR ADC is provided with an improved capacitive digital-to-analog converter (CDAC), and the capacitor array is featured by six split high-bit capacitors and a combination of splitting and monotonic switching schemes. This structure and switching scheme can both save power and improve speed while introducing negligible common-mode voltage change. An improved double-tail comparator and TSPC D flip-flops are implemented to further enhance the speed. Simulation results show that the ADC achieves SFDR 72.17 dB, SNDR 61.37 dB, and ENOB 9.90 bits at Nyquist input frequency. The power consumption of the ADC under a 1.2 V power supply is 2.808 mW, achieving 18.4 fJ/conv FoM.
A Bootstrap Drive and Level Shifting Method for Buck-boost Converter with NMOS as the Main Switch TransistorWang, Yapeng; Guo, Zhongjie; Qiu, Ziyi; Li, Mengli; Ren, Yuan
doi: 10.1088/1742-6596/2645/1/012015pmid: N/A
In the design of DC-DC power supply, compared with a P-type metal oxide semiconductor field effect transistor (PMOS) with the same width-to-length ratio, N-type metal oxide semiconductor field effect transistor (NMOS) as the main switching transistor greatly reduces the on-off loss and improves the conversion efficiency of the system. This article introduces a gate voltage bootstrap and level shifter circuit for a Buck-Boost DC-DC converter with NMOS main switching transistor. The drive voltage between the gate and the source pole of the main switch transistor can be stabilized, which is independent of the switch junction voltage (VSW) and solves the problem that the drive voltage of the gate is too high or too low due to the influence of the bootstrap voltage in the traditional structure. Based on the 0.18 μm BCD process, the circuit design and physical implementation of the proposed method are verified. The test results show that the bootstrap drive circuit functions normally and the bootstrap drive voltage is about 5 V when the input voltage is 2.9~4.5 V and the output voltage is −2~-5 V. In addition, the proposed gate-level shifting circuit can reduce the drive delay of the main switch transistor to less than 12 ns.
Research on the Recovery Technology of Damaged Characters Based on the Magneto-optical MethodWang, Haoyu; Shen, Yao; Chen, Ruili
doi: 10.1088/1742-6596/2645/1/012004pmid: N/A
This work intends to address the issue of surface damage to significant characters on ferromagnetic materials for the assessment of physical evidence. For the identification of altered metallic characteristics, a nondestructive magneto-optical imaging recovery approach based on the magneto-optical effect is presented. The results of the experiments demonstrate that the technique may successfully repair the damaged metallic features. It can be used as a nondestructive test for the examination and restoration of altered and damaged metal handwriting in criminal technology, which offers a fresh approach and method to deal with this issue.
Research On Etching of Distributed Bragg ReflectorGao, Yuan; Song, Jiejing; Zhou, Guo; Fu, Xingzhong; Li, Xiaolan; Sun, Niefeng; Ji, Ziwu; Zhang, Lijiang
doi: 10.1088/1742-6596/2645/1/012005pmid: N/A
This study investigated the effect of etching process parameters on the sidewall morphology and bottom metal etching damage of Distributed Bragg Reflector (DBR), and analyzed the underlying mechanisms. By comparing the etching morphology under different RF power and pressure conditions, it was found that increasing RF power and reducing pressure can solve the problem of sidewall fracture and obtain a smooth sidewall morphology. By comparing the effect of different process gases on the sidewall angle, it was found that adding O2 can reduce the DBR/Photoresit selectivity and sidewall angle while adding BCl3 can increase the DBR/Photoresit selectivity and sidewall angle. Therefore, the sidewall angle can be adjusted by controlling the type and flow rate of the etching gas. By comparing the DBR/metal selectivity under different RF power, it was found that as the RF power decreases, the DBR/metal selectivity increases, which can prevent metal splashing caused by over-etching of metal. Therefore, in DBR etching, high RF power is used for main etching to obtain a smooth sidewall morphology and the sidewall angle can be adjusted by varying the gas type and flow rate, while low RF power is used for over-etching to improve the DBR/metal selectivity and prevent metal over-etching. This study has reference significance for the development of the inverted chip DBR process.
Prefacedoi: 10.1088/1742-6596/2645/1/011001pmid: N/A
The 2023 2nd International Symposium on Semiconductor and Electronic Technology (ISSET 2023) was held in Qingdao, China during 11th–13th, August 2023. Following the success of the previous conference, the aim of this year’s conference was to present the most recent advances in the fields of semiconductor and electronic technology.The ISSET 2023 was supported by Hefei University of Technology. With more than 60 participants from over 20 well-known universities domestically, the Conference was a great success. It is of great significance for disseminating cutting-edge information in disciplines and industries, promoting the transformation of scientific and technological achievements, and condensing academic achievements in the industry at this event.The Conference consisted of three plenary keynote lectures (addressed by Professor Fengqiu Wang, Professor Yuda Zhao, Professor Junjie Qi, respectively) as well as various oral and poster presentations, in which a wide range of topics were covered and the most recent significant results were presented. From the perspective of industry status, development trends, and cutting-edge technologies, our keynote speakers performed special speeches on popular disciplines such as Semiconductor Materials and Device Reliability, 3D Semiconductor Device Technology, Microelectronics Science and Engineering, Optoelectronics and Photovoltaic Devices, Electronic Information Engineering, etc. And the attending scholars and experts deeply exchanged the latest research achievements and advanced experience in industry development and shared their unique insights into development trends and research directions of the industry. Some selected works presented in the Conference are published in this edition of Journal of Physics: Conference Series.We wish to acknowledge all the participants, and the support of our sponsors. And we would like to take this opportunity to thank the members of Technical Program Committee, the reviewers, as well as the Chairs of the conference sessions.As the final foreword, we hope that the Conference shall continue to the next series and deliver its purpose as the arena for presenting and exchanging the ideas of research in the fields of semiconductor and electronic technology and anything related.The Committee of ISSET 2023List of Committee Member is available in this Pdf.
Research on the microstructure and properties of Al-Mg-Si alloy with different amounts of B elementLi, Dongqing; Gu, Jian; Zheng, Shuhui; Liu, Shengchun; Si, Jiajun
doi: 10.1088/1742-6596/2645/1/012006pmid: N/A
The microstructure and properties of Al-Mg-Si alloy with different contents of B element were studied through microstructure, mechanical properties, and conductivity. The results showed that after adding the B element, the precipitates tended to precipitate along grain boundaries. As the amount of the B element increased, the grain coursing was severe, and the tensile strength was slightly improved. However, the impact on hardness was not significant, and the yield strength ratio showed a downward trend. When the addition amount of B element was 0.02wt.%, the Al-Mg-Si alloy had the best conductivity. Therefore, by comprehensive consideration of the conductivity and mechanical properties, the optimal addition amount of B was 0.02 wt.%.
A failure mechanism of IGBT module in MMC and improvementLi, Cui; Jin, Rui; He, Feng; Liu, Yueyang; Liu, Jiang; Wu, Tianyi; Tian, Baohua; Nie, Ruifen; Sun, Wanru; Hao, Xiamin
doi: 10.1088/1742-6596/2645/1/012008pmid: N/A
In modular multi-level converter valves, as the blocked mode happens, the failure in IGBT modules often causes a chain explosion reaction, which masks the initial failure mechanism. The root cause of the failure was that the voltage, consisting of the diode forward voltage and the induced voltage on the parasitic inductance, exceeded the reverse blocking capability of the anti-parallel IGBT. The methods against the failure were studied from three aspects: decreasing the diode’s peak forward voltage, increasing the reverse blocking capability of IGBT, and minimizing the parasitic inductance of the package. It was found that the doping concentration’s effect on the diode’s peak forward voltage is not monotonic. It can be explained from the carrier density distribution during forward recovery transient that lower doping concentration reduces the carrier injection, and higher doping concentration reduces the excess carrier concentration in the doping region. Then, the influence of two buffer designs on the reverse blocking capability of IGBT was compared. It was found that a higher reverse blocking voltage would be achieved when a multi-proton implantation buffer replaced the diffused buffer. And the new design has almost no degradation in forward blocking capability.
Reaction Controllable preparation and electrocatalytic performance of two-dimensional sulfidesXinWang, ; Yang, Qi Chao; Wang, Hai tao; Zheng, Yu; Zhong, Geng hang; Zhao, Jiang wei
doi: 10.1088/1742-6596/2645/1/012017pmid: N/A
Two-dimensional sulfide has been widely recognized as a promising new type of catalyst to replace precious metals due to its adjustable electronic structure, low cost, and high stability. In this paper, monolayer molybdenum disulfide (MoS2) and layer-controlled tungsten disulfide (WS2) were successfully prepared by chemical vapor deposition (CVD). The two prepared materials’ morphology, structure, and thickness were investigated. The catalytic performance of two-dimensional sulfides was studied under an acidic environment. The results exhibit good catalytic performance toward hydrogen evolution with 63.6 mV/dec low Tafel slope of MoS2 and 72.8 mV/dec of WS2.
A power constant logic circuit based on mask controlLi, Haiwei; Yao, Maoqun; Li, Conghui; Shen, Shanhu
doi: 10.1088/1742-6596/2645/1/012010pmid: N/A
As the structure of existing anti-power attack circuits has certain security problems, this paper proposes a new mask-based control constant power logic circuit based on the existing masking technology. By integrating OR/NOR and AND/NAND circuits into a dual-rail circuit, different circuit logic functions can be controlled by inputting different masks. By introducing two parameters, Normalised Energy Deviation (NED) and Normalised Standard Deviation (NSD), the structure proposed in this paper improves the level of resistance of the circuit to power attacks to a certain extent, as well as reduces the cost of the circuit compared to other power attack resistant circuits.