%0 Journal Article
%T High-Mobility Holes in Dual-Gated WSe<sub>2</sub> Field-Effect Transistors
%A Movva, Hema C. P.
%A Rai, Amritesh
%A Kang, Sangwoo
%A Kim, Kyounghwan
%A Fallahazad, Babak
%A Taniguchi, Takashi
%A Watanabe, Kenji
%A Tutuc, Emanuel
%A Banerjee, Sanjay K.
%A ,
%J ACS Nano
%@ 1936-0851
%D 2015-09-14
%I American Chemical Society (ACS)
%~ DeepDyve