TY - JOUR
AU - McHeyzer-Williams, Louise
AB - 


High-affinity B cell memory emerges across three separable phases of development. Each phase involves antigen recognition by specific B cells and contact with cognate T follicular helper (TFH) cells.


Initial commitment to the memory B cell pathway occurs before germinal centre (GC) formation, following first contact with antigen-specific TFH cells (pre-GC phase). Molecular interactions at the cellular interface involve cell-associated contacts and signals from secreted molecules such as cytokines.


The GC reaction supports reiterative cycles of B cell receptor (BCR) diversification, clonal expansion and class-switch recombination (GC phase) that promote the positive selection of high-affinity GC B cell variants into the memory B cell compartment.


Following antigen recall, memory B cells require regulation by antigen-specific TFH cells to proliferate and differentiate into memory-response plasma cells (memory phase). Affinity maturation of the antibody response continues at this stage using mechanisms that are poorly understood.


Antigen-specific TFH cells regulate each phase of development and consolidate memory B cell fate in high-affinity pre-memory and memory B cells.


Beyond antigen recognition, antibody class determines immune function and antibody affinity controls the sensitivity of memory B cells.



TI - Molecular programming of B cell memory
JF - Nature Reviews Immunology
DO - 10.1038/nri3128
DA - 2011-12-09
UR - https://www.deepdyve.com/lp/springer-journals/molecular-programming-of-b-cell-memory-7tchQW0Dro
SP - 24
EP - 34
VL - 12
IS - 1
DP - DeepDyve
ER -