TY - JOUR
AU1 - Guo, Daoyou
AU2 - Qin, Xinyuan
AU3 - Lv, Ming
AU4 - Shi, Haoze
AU5 - Su, Yuanli
AU6 - Yao, Guosheng
AU7 - Wang, Shunli
AU8 - Li, Chaorong
AU9 - Li, Peigang
AU1 - Tang, Weihua
AB - Abstract Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.
TI - Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β -Ga 2 O 3 thin films
JF - "Electronic Materials Letters"
DO - 10.1007/s13391-017-7072-y
DA - 2017-11-01
UR - https://www.deepdyve.com/lp/springer-journals/decrease-of-oxygen-vacancy-by-zn-doped-for-improving-solar-blind-8ptUh0sQZg
SP - 483
EP - 488
VL - 13
IS - 6
DP - DeepDyve
ER -