TY - JOUR
AU1 - Dankelmann, Marcus
AU2 - Czekalla, Markus
AU3 - Estel, Heiko
AU4 - Hahn, Jens
AU5 - Hong, Bee Kim
AU6 - Lamm, Mario
AU7 - Neubert, Eric
AU8 - Renner, Michael
AU9 - Scheibel, Rainer
AU1 - Stegemann, Maik
AU1 - Schneider, Jens
AB - The use of TiN-Hard masks for Cu metal layer patterning has become a common technique for trench first metal hard mask (TFMH) back end of line (BEOL) integration schemas. Resist rework influences the chemical and physical behavior of the TiN hard mask and therefore the final result of the dual damascene etch process in terms of critical line dimension (CD) and trench taper determining the electrical metal sheet resistance. Within this paper, the effects of three different resist rework strip procedures on subsequent TiN hard mask and dual damascene etching, using O2, H2N2 and H2O plasma processes, are compared. Furthermore, the interaction of the rework process with the CD tuning capabilities in dual damascene etch are evaluated. Summarizing the data, a stable process flow for wafers with and without resist rework is shown, eliminating litho CD rework offsets, resulting in metal trench processing with tight geometrical and electrical distributions.
TI - Litho resist rework influences on Cu metal layer patterning with TiN-hard mask
JF - Proceedings of SPIE
DO - 10.1117/12.2045307
DA - 2014-03-28
UR - https://www.deepdyve.com/lp/spie/litho-resist-rework-influences-on-cu-metal-layer-patterning-with-tin-avD0hKDBrc
SP - 90540P
EP - 90540P-12
VL - 9054
IS - 
DP - DeepDyve
ER -