TY - JOUR
AU1 - Michel, Jurgen
AU2 - Liu, Jifeng
AU3 - Kimerling, Lionel C.
AB - The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.
TI - High-performance Ge-on-Si photodetectors
JF - Nature Photonics
DO - 10.1038/nphoton.2010.157
DA - 2010-07-30
UR - https://www.deepdyve.com/lp/springer-journals/high-performance-ge-on-si-photodetectors-sNgDVcEHkg
SP - 527
EP - 534
VL - 4
IS - 8
DP - DeepDyve
ER -