TY - JOUR
AU1 - Kumar, Vibhor
AU2 - Kumar, Sandeep
AU3 - Maan, A. S.
AU4 - Akhtar, Jamil
AB - Present work reports capacitance-conductance spectroscopic investigations of the selective swift heavy ion irradiated 4H–SiC based Schottky diodes. All measurements are performed under forward bias and in the frequency range  from 100 Hz to 1 MHz. Compared to pristine ones, significant shift in the position and height of the peaks in the capacitance–voltage characteristics are observed after selective irradiation of the devices. These findings are discussed on the basis of interfacial modifications carried out by the electronic energy loss mechanism of the impinge ions. Additionally, Raman spectroscopic investigations have been performed to unveil the bulk modifications in the material under reference. A decrease in the peak intensity and occurrence of distorted-SiC peaks in the selectively irradiated material is observed. Such results are explained by taking into account the nuclear energy loss mechanism of the ions at the end of their range in the material under reference.
TI - Interfacial and structural analysis of MeV heavy ion irradiated SiC
JF - Applied Nanoscience
DO - 10.1007/s13204-021-01921-5
DA - 2023-05-01
UR - https://www.deepdyve.com/lp/springer-journals/interfacial-and-structural-analysis-of-mev-heavy-ion-irradiated-sic-sk8rH0771t
SP - 3181
EP - 3188
VL - 13
IS - 5
DP - DeepDyve
ER -