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Perfect, partial, and split dislocations in quantum dots

Perfect, partial, and split dislocations in quantum dots A mechanism for relaxation of misfit stresses in nanoislands (quantum dots) is theoretically examined which is the formation of partial and split misfit dislocations. The parameters of nanoislands with perfect, partial, and split misfit dislocations are estimated and compared, with emphasis on the case of Ge/Si nanoislands. Different dislocation structures are shown to be energetically preferred in different regions of the nanoisland/substrate interface. It is theoretically revealed that perfect misfit dislocations (conventionally considered in models of dislocated nanoislands) are not energetically favorable in pyramidlike nanoislands in Ge/Si system. Also, it is shown that misfit dislocation formation is capable of causing nanoisland shape transformation as an energetically favorable process. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Perfect, partial, and split dislocations in quantum dots

Ovid’ko, I. A; Sheinerman, A. G
Physical Review B , Volume 66 (24) – Dec 15, 2002
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Publisher
American Physical Society (APS)
Copyright
Copyright © 2002 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.66.245309
Publisher site
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Abstract

A mechanism for relaxation of misfit stresses in nanoislands (quantum dots) is theoretically examined which is the formation of partial and split misfit dislocations. The parameters of nanoislands with perfect, partial, and split misfit dislocations are estimated and compared, with emphasis on the case of Ge/Si nanoislands. Different dislocation structures are shown to be energetically preferred in different regions of the nanoisland/substrate interface. It is theoretically revealed that perfect misfit dislocations (conventionally considered in models of dislocated nanoislands) are not energetically favorable in pyramidlike nanoislands in Ge/Si system. Also, it is shown that misfit dislocation formation is capable of causing nanoisland shape transformation as an energetically favorable process.

Journal

Physical Review B – American Physical Society (APS)

Published: Dec 15, 2002

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