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- Copyright
- Copyright © 1971 ECS - The Electrochemical Society
- ISSN
- 0013-4651
- eISSN
- 1945-7111
- DOI
- 10.1149/1.2407921
- Publisher site
- See Article on Publisher Site
Abstract
The system has been found to give good results for preferential etching of . The etch rates for the low‐index planes of in this system have been investigated as a function of Br2 concentrations in .The order of the etch rate at 1% Br2 by weight has been found to be planes have been only slightl yetched. The A{111} planes have played an important role for the etched profiles produced by this etching system. A V‐shaped groove, a reverse mesa‐shaped structure, and a triangular prism‐shaped “bridge” have been formed by channels being etched on the {100} planes. The sizes of the V‐shaped groove and the “bridge” have been controlled by the width of the opening in the oxide mask. A channel etched groove in the B{111} planes has also exhibited crystal habit. Interesting etched profiles which are applicable for the design and fabrication of device structures are described.
Journal
Journal of the Electrochemical Society – IOP Publishing
Published: Jan 1, 1971