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Additional H-related local vibrational modes in proton-implanted InP

Additional H-related local vibrational modes in proton-implanted InP At least 15 different hydrogen-related local vibrational modes (LVMs) are now found in proton-implanted InP as compared with the four we have previously reported. The additional LVMs are all observed by IR absorption in the 2200 to 2300 cm-1 region, are weaker in intensity than the original four, and are very reproducible in InP material from a variety of sources. Isochronal annealing studies indicate that some of these LVMs disappear by 250 degrees C but are then replaced by new LVMs, most of which are gone by 350 degrees C. These annealing characteristics are very different from the previously shown (four strongest) LVMs. All of these weaker LVMs are believed to be due to various P-H-related defect complexes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Semiconductor Science and Technology IOP Publishing

Additional H-related local vibrational modes in proton-implanted InP

Semiconductor Science and Technology , Volume 9 (1) – Jan 1, 1994
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Copyright
Copyright © IOP Publishing Ltd
ISSN
0268-1242
eISSN
1361-6641
DOI
10.1088/0268-1242/9/1/001
Publisher site
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Abstract

At least 15 different hydrogen-related local vibrational modes (LVMs) are now found in proton-implanted InP as compared with the four we have previously reported. The additional LVMs are all observed by IR absorption in the 2200 to 2300 cm-1 region, are weaker in intensity than the original four, and are very reproducible in InP material from a variety of sources. Isochronal annealing studies indicate that some of these LVMs disappear by 250 degrees C but are then replaced by new LVMs, most of which are gone by 350 degrees C. These annealing characteristics are very different from the previously shown (four strongest) LVMs. All of these weaker LVMs are believed to be due to various P-H-related defect complexes.

Journal

Semiconductor Science and Technology – IOP Publishing

Published: Jan 1, 1994

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