Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

DeepDyve requires Javascript to function. Please enable Javascript on your browser to continue.

Xie, Feng; Lu, Hai; Xiu, Xiangqian; Chen, Dunjun; Han, Ping;

Solid-State Electronics , Volume 57 (1): 39-42 – Mar 1, 2011

Download PDF

Xie, Feng; Lu, Hai; Xiu, Xiangqian; Chen, Dunjun; Han, Ping;

Solid-State Electronics , Volume 57 (1): 39-42 – Mar 1, 2011

Loading next page...

References

References for this paper are not available at this time. We will be adding them shortly, thank you for your patience.

High responsitivity intrinsic photoconductors based on AlGaN

Lim
Schottky barrier detectors on GaN for visible-blind ultraviolet detection

Chen
High-performance (Al, Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

Parish
AlxGa1−xN ultraviolet avalanche photodiodes grown on GaN substrates

Yoo
High-speed, low-noise metal-semiconductor–metal ultraviolet photodetectors based on GaN

Walker
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Hsu
Cathodoluminescence mapping and selective etching of defects in bulk GaN

Lu
Persistent photocurrent spectroscopy of GaN metal-semiconductor–metal photodetectors on long time scale

Poti
Photocurrent gain mechanisms in metal-semiconductor–metal photodetectors

Klingenstein
Photoconductor gain mechanisms in GaN ultraviolet detectors

Muñoz
In0.53Ga0.47As metal-semiconductor–metal photodiodes with transparent cadmium tin oxide Schottky contacts

Gao
Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

Katz
Atomic geometry and electronic structure of native defects in GaN

Neugebauer
Nature of native oxide on GaN surface and its reaction with Al

Prabhakaran
Deep centers in a free-standing GaN layer

Fang
Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering

Burm