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- Publisher
- Oxford University Press
- Copyright
- © 2016 The Chemical Society of Japan
- ISSN
- 0009-2673
- eISSN
- 1348-0634
- DOI
- 10.1246/bcsj.20160125
- Publisher site
- See Article on Publisher Site
Abstract
Two kinds of ladder-type thiophene-fused π-conjugated compounds, benzo[2,1-b:3,4-b′]bis[1]benzothiophene (syn-BBBT) and dinaphtho[2,3-d:2′,3′-d′]benzo[2,1-b:3,4-b′]dithio-phene (syn-DNBDT), were successfully synthesized. Photophysical and electrochemical properties were evaluated by UV–vis and photoluminescence spectroscopies and cyclic voltammetry as well as theoretical calculations. These properties were compared with those of structural isomers and oxygen analogs to reveal the effect of the fused position of thiophene rings and the fused heteroaromatic rings on π-conjugation. Field-effect transistors with the thin films of syn-BBBT and syn-DNBDT demonstrated typical p-type semiconductor characteristics with relatively high mobilities of <1.3 × 10−1 cm2 V−1 s−1.
Journal
Bulletin of the Chemical Society of Japan – Oxford University Press
Published: May 30, 2016