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References (1)
- Copyright
- Copyright © IOP Publishing Ltd
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- DOI
- 10.1088/0268-1242/13/12/005
- Publisher site
- See Article on Publisher Site
Abstract
A method of simulating the profile of thin metallic films produced by low-pressure CVD is reported. This method can calculate profiles under surface-reaction-limited conditions and transport-limited conditions. Surface reactions and transport of source-gas molecules in a chamber are modelled for the method. In order to simulate the profile, the surface reactions were calculated using the Monte Carlo method and the transport model was derived analytically. The dependence of the growth rate on the partial pressure of source gas was derived analytically by combining the surface reactions and the transport in order to determine the surface-reaction rates and the transport constant. The theoretical growth rate dependence and the profile simulation method were applied to tungsten CVD. The theoretical growth rate dependence on partial pressure and profile simulations show good quantitative agreement with the experimental results over a wide range of partial pressures. The simulated profiles produced by the method also show good agreement with the experimental results on a wide range of partial pressures.
Journal
Semiconductor Science and Technology – IOP Publishing
Published: Dec 1, 1998