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The field-effect threshold V th is determined as the voltage of the interception of linear interpolation of V g curve and V g axis
Electronic address: [email protected]
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Assembling of the rubrene FETs was performed in air; no degradation of the device performance was noticed after prolonged storage of the crystals in air and in the dark
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The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene ( C 42 H 28 ) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, μ , and the growth of μ with cooling. Anisotropy of μ vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting μ , an indication that the filled traps do not scatter polarons.
Physical Review Letters – American Physical Society (APS)
Published: Aug 20, 2004
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