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Intrinsic Charge Transport on the Surface of Organic Semiconductors

Intrinsic Charge Transport on the Surface of Organic Semiconductors The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene ( C 42 H 28 ) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, μ , and the growth of μ with cooling. Anisotropy of μ vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting μ , an indication that the filled traps do not scatter polarons. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review Letters American Physical Society (APS)

Intrinsic Charge Transport on the Surface of Organic Semiconductors

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References (17)

Publisher
American Physical Society (APS)
Copyright
Copyright © 2004 The American Physical Society
ISSN
1079-7114
DOI
10.1103/PhysRevLett.93.086602
pmid
15447211
Publisher site
See Article on Publisher Site

Abstract

The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene ( C 42 H 28 ) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, μ , and the growth of μ with cooling. Anisotropy of μ vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting μ , an indication that the filled traps do not scatter polarons.

Journal

Physical Review LettersAmerican Physical Society (APS)

Published: Aug 20, 2004

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