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Charge Carrier Production and Mobility in Anthracene Crystals

Charge Carrier Production and Mobility in Anthracene Crystals The drift mobilities of electrons and holes in anthracene crystals have been measured using a pulsed photoconductivity technique. The mobilities found at room temperature vary from about 0.3 cm 2 /volt sec to about 3 cm 2 /volt sec, depending on the crystal orientation, and the mobilities increase as the temperature is lowered. The wavelength dependence of the number of charge carriers produced by a pulse of light, as well as other experimental data, indicates that the charge carriers are not produced in the interior of anthracene crystals, but that they are released from a surface layer of the crystal either directly by photons or by excitons which migrate to the surface. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review American Physical Society (APS)

Charge Carrier Production and Mobility in Anthracene Crystals

Physical Review , Volume 119 (4) – Aug 15, 1960
4 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1960 The American Physical Society
ISSN
1536-6065
DOI
10.1103/PhysRev.119.1226
Publisher site
See Article on Publisher Site

Abstract

The drift mobilities of electrons and holes in anthracene crystals have been measured using a pulsed photoconductivity technique. The mobilities found at room temperature vary from about 0.3 cm 2 /volt sec to about 3 cm 2 /volt sec, depending on the crystal orientation, and the mobilities increase as the temperature is lowered. The wavelength dependence of the number of charge carriers produced by a pulse of light, as well as other experimental data, indicates that the charge carriers are not produced in the interior of anthracene crystals, but that they are released from a surface layer of the crystal either directly by photons or by excitons which migrate to the surface.

Journal

Physical ReviewAmerican Physical Society (APS)

Published: Aug 15, 1960

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