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/lp/iop-publishing/the-dynamics-of-shallow-donor-ionization-in-n-gaas-studied-with-HoHCiH560n
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- Copyright
- Copyright © IOP Publishing Ltd
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- DOI
- 10.1088/0268-1242/9/1/006
- Publisher site
- See Article on Publisher Site
Abstract
The low-temperature dynamics of far-infrared (FIR) excited electrons bound to shallow donors has been studied in n-GaAs. In a magnetic field of 3.6 T the electrons are excited from the ground state to the 2p+1 donor state with a short pulse of 118.8 mu m radiation and the photoconductive response is monitored with subnanosecond resolution. The observed response can be described with a simple three-level rate equation model, yielding a minimum value of 5*109 s-1 for the ionization rate of a shallow donor in the 2p+1 bound state.
Journal
Semiconductor Science and Technology – IOP Publishing
Published: Jan 1, 1994