Access the full text.
Sign up today, get DeepDyve free for 14 days.
Loading next page...
/lp/iop-publishing/carbon-nanotube-field-effect-transistor-with-a-carbon-nanotube-gate-IYOK2CWnqT
References (33)
-
Sergei Kalinin, M. Freitag, A. Johnson, D. Bonnell (2002)
Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopiesApplied Physics Letters, 81
-
J. Kong, H. Soh, A. Cassell, C. Quate, H. Dai (1998)
Synthesis of individual single-walled carbon nanotubes on patterned silicon wafersNature, 395
-
D. Bozovic, M. Bockrath, J. Hafner, Charles Lieber, H. Park, M. Tinkham (2002)
Plastic deformations in mechanically strained single-walled carbon nanotubesPhysical Review B, 67
-
T. Hertel, R. Martel, P. Avouris (1998)
Manipulation of Individual Carbon Nanotubes and Their Interaction with SurfacesJournal of Physical Chemistry B, 102
-
H. Shea, R. Martel, T. Hertel, T. Schmidt, P. Avouris (1999)
Manipulation of carbon nanotubes and properties of nanotube field-effect transistors and ringsMicroelectronic Engineering, 46
-
N. Mason, M. Biercuk, C. Marcus (2004)
Local Gate Control of a Carbon Nanotube Double Quantum DotScience, 303
-
Ji-Yong Park, S. Rosenblatt, Y. Yaish, V. Sazonova, Hande Ustunel, S. Braig, T. Arias, P. Brouwer, P. McEuen (2003)
Electron-Phonon Scattering in Metallic Single-Walled Carbon NanotubesNano Letters, 4
-
Y. Yaish, Ji-Yong Park, S. Rosenblatt, V. Sazonova, M. Brink, P. McEuen (2003)
Electrical nanoprobing of semiconducting carbon nanotubes using an atomic force microscope.Physical review letters, 92 4
-
Jie Cao, Qian Wang, H. Dai (2003)
Electromechanical properties of metallic, quasimetallic, and semiconducting carbon nanotubes under stretching.Physical review letters, 90 15
-
P. Pablo, C. Gómez-Navarro, J. Colchero, P. Serena, J. Gómez‐Herrero, A. Baró (2002)
Nonlinear resistance versus length in single-walled carbon nanotubes.Physical review letters, 88 3
-
K. Alam, R. Lake (2005)
Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕drain underlapsApplied Physics Letters, 87
-
R. Martel, T. Schmidt, H. Shea, T. Hertel, P. Avouris (1998)
Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 73
-
S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris (2002)
Carbon nanotubes as schottky barrier transistors.Physical review letters, 89 10
-
Woong Kim, A. Javey, O. Vermesh, Qian Wang, Yiming Li, H. Dai (2003)
Hysteresis caused by water molecules in carbon nanotube field-effect transistorsNano Letters, 3
-
Ji-Yong Park, Y. Yaish, M. Brink, S. Rosenblatt, P. McEuen (2002)
Electrical cutting and nicking of carbon nanotubes using an atomic force microscopeApplied Physics Letters, 80
-
S. Tans, A. Verschueren, C. Dekker (1998)
Room-temperature transistor based on a single carbon nanotubeNature, 393
-
M. Fuhrer, B. Kim, T. Dürkop, T. Brintlinger (2002)
High-Mobility Nanotube Transistor MemoryNano Letters, 2
-
D. Bozovic, M. Bockrath, J. Hafner, Charles Lieber, Hongkun Park, M. Tinkham (2001)
Electronic properties of mechanically induced kinks in single-walled carbon nanotubesApplied Physics Letters, 78
-
Zhihong Chen, J. Appenzeller, Yu-Ming Lin, Jennifer Sippel-Oakley, A. Rinzler, Jinyao Tang, S. Wind, P. Solomon, P. Avouris (2006)
An Integrated Logic Circuit Assembled on a Single Carbon NanotubeScience, 311
-
M. Biercuk, N. Mason, J. Chow, C. Marcus (2003)
Locally Addressable Tunnel Barriers within a Carbon NanotubeNano Letters, 4
-
P. Bandaru, Chiara Daraio, Sungho Jin, Apparao Rao (2005)
Novel electrical switching behaviour and logic in carbon nanotube Y-junctionsNature Materials, 4
-
T. Tombler, Chongwu Zhou, Leo Alexseyev, J. Kong, H. Dai, Lei Liu, C. Jayanthi, M. Tang, Shi‐yu Wu (2000)
Reversible electromechanical characteristics of carbon nanotubes underlocal-probe manipulationNature, 405
-
A. Bachtold, M. Fuhrer, S. Plyasunov, M. Forero, E. Anderson, A. Zettl, P. McEuen (2000)
Scanned probe microscopy of electronic transport in carbon nanotubes.Physical review letters, 84 26 Pt 1
-
Yu-Ming Lin, Joerg Appenzeller, Zhihong Chen, Zhigang Chen, Huihang Cheng, P. Avouris (2005)
High-performance dual-gate carbon nanotube FETs with 40-nm gate lengthIEEE Electron Device Letters, 26
-
A. Javey, Hyoungsub Kim, M. Brink, Qian Wang, A. Ural, Jing Guo, P. McIntyre, P. McEuen, Mark Lundstrom, H. Dai (2002)
High-κ dielectrics for advanced carbon-nanotube transistors and logic gatesNature Materials, 1
-
S. Tans, C. Dekker (2000)
Molecular transistors: Potential modulations along carbon nanotubesNature, 404
-
Yu-Ming Lin, Joerg Appenzeller, J. Knoch, P. Avouris (2005)
High-performance carbon nanotube field-effect transistor with tunable polaritiesIEEE Transactions on Nanotechnology, 4
-
Chongwu Zhou, Jing Kong, Hongjie Dai (2000)
Intrinsic electrical properties of individual single-walled carbon nanotubes with small band gapsPhysical review letters, 84 24
-
H. Dai, A. Javey, E. Pop, D. Mann, Woong Kim, Yuerui Lu (2006)
ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBESNANO, 01
-
A. Javey, Jing Guo, Qian Wang, M. Lundstrom, H. Dai (2003)
Ballistic carbon nanotube field-effect transistorsNature, 424
-
E. Minot, Y. Yaish, V. Sazonova, Ji-Yong Park, M. Brink, P. McEuen (2002)
Tuning carbon nanotube band gaps with strain.Physical review letters, 90 15
-
P. Avouris, T. Hertel, R. Martel, T. Schmidt, H. Shea, R. Walkup (1999)
Carbon nanotubes: nanomechanics, manipulation, and electronic devicesApplied Surface Science, 141
-
P. Avouris (2004)
Carbon Nanotube Electronics and OptoelectronicsMRS Bulletin, 29
- Copyright
- Copyright IOP Publishing Ltd
- ISSN
- 0957-4484
- eISSN
- 1361-6528
- DOI
- 10.1088/0957-4484/18/9/095202
- Publisher site
- See Article on Publisher Site
Abstract
An ultimate scaling in the gate width in a carbon nanotube field-effect transistor (CNTFET) isdemonstrated with a gate electrode which is formed by another CNT (width of3 nm) with conventional nanofabrication followed by manipulations with an atomic forcemicroscope (AFM). The transport characteristics of the CNTFET with the CNTgate show marked improvements in device performance compared to one withthe global back gate. This also shows that the AFM-based manipulations canhelp in fabricating prototypes of novel nanoelectronic devices based on CNTs.
Journal
Nanotechnology – IOP Publishing
Published: Mar 7, 2007