Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 7-Day Trial for You or Your Team.

Learn More →

Recrystallisation of amorphous silicon films by rapid isothermal and transient annealing

Recrystallisation of amorphous silicon films by rapid isothermal and transient annealing Undoped amorphous silicon films have been produced by the implantation of 70 keV 8*1014 28Si ions cm-2 into (100) silicon wafers. These layers have been recrystallised by rapid isothermal annealing at 600 degrees C and transient thermal annealing for 400 mu s in the temperature range 800-1100 degrees C. The annealing has been carried out in an optical annealing furnace consisting of a bank of tungsten-halogen lamps below the specimen, with which the rapid isothermal anneals were performed, and a bank of linear flashlamps above the specimen for the transient annealing. After annealing, the thickness and quality of the recrystallised layers have been assessed by ellipsometry and transverse TEM. In the RIA material the average rate of recrystallisation has been calculated by carrying out constant temperature anneals for different times and measuring the remaining film thickness. Using these results in conjunction with published data on the temperature dependence of the recrystallisation rates the annealing temperature has been calculated and compared with the temperature measured by a thermocouple. This technique provides a valuable tool with which isothermal annealing temperatures may be calibrated. Measurements have been made of the total recrystallisation that occurred in the flash annealed material. This data has been compared with the temperature profiles that are predicted by a one-dimensional heat-flow simulation program that models the absorption and heat flow within the wafer during flash annealing. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Semiconductor Science and Technology IOP Publishing

Recrystallisation of amorphous silicon films by rapid isothermal and transient annealing

Semiconductor Science and Technology , Volume 3 (5) – May 1, 1988
Download PDF
5 pages

Loading next page...
 
/lp/iop-publishing/recrystallisation-of-amorphous-silicon-films-by-rapid-isothermal-and-KKAgPnUIYD

References (3)

Copyright
Copyright © IOP Publishing Ltd
ISSN
0268-1242
eISSN
1361-6641
DOI
10.1088/0268-1242/3/5/002
Publisher site
See Article on Publisher Site

Abstract

Undoped amorphous silicon films have been produced by the implantation of 70 keV 8*1014 28Si ions cm-2 into (100) silicon wafers. These layers have been recrystallised by rapid isothermal annealing at 600 degrees C and transient thermal annealing for 400 mu s in the temperature range 800-1100 degrees C. The annealing has been carried out in an optical annealing furnace consisting of a bank of tungsten-halogen lamps below the specimen, with which the rapid isothermal anneals were performed, and a bank of linear flashlamps above the specimen for the transient annealing. After annealing, the thickness and quality of the recrystallised layers have been assessed by ellipsometry and transverse TEM. In the RIA material the average rate of recrystallisation has been calculated by carrying out constant temperature anneals for different times and measuring the remaining film thickness. Using these results in conjunction with published data on the temperature dependence of the recrystallisation rates the annealing temperature has been calculated and compared with the temperature measured by a thermocouple. This technique provides a valuable tool with which isothermal annealing temperatures may be calibrated. Measurements have been made of the total recrystallisation that occurred in the flash annealed material. This data has been compared with the temperature profiles that are predicted by a one-dimensional heat-flow simulation program that models the absorption and heat flow within the wafer during flash annealing.

Journal

Semiconductor Science and Technology – IOP Publishing

Published: May 1, 1988

There are no references for this article.