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2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg1-xCdxTe (0.2<x<or=0.3)

2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap... The inversion channel of metal-insulator (Al2O3) semiconductor (p-Hg1-xCdxTe) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measurements. Observation of the SdH effect enables us to determine the dielectric constant of the oxide ( epsilon r=10.9+or-1.0) and provides evidence of two occupied subbands (i=0, 1) with an effective electron mass ratio m0/m1 approximately=2. From tilted magnetic field experiments an enhanced effective g-factor g*(x=0.3)=-65 in the lowest Landau level of the lowest subband was estimated. The maximum channel mobility mu max(4.2K)=3000 cm2 V-1 s-1 is limited by alloy inhomogeneities and interface roughness. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Semiconductor Science and Technology IOP Publishing

2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg1-xCdxTe (0.2<x<or=0.3)

Semiconductor Science and Technology , Volume 9 (1) – Jan 1, 1994
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Copyright
Copyright © IOP Publishing Ltd
ISSN
0268-1242
eISSN
1361-6641
DOI
10.1088/0268-1242/9/1/010
Publisher site
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Abstract

The inversion channel of metal-insulator (Al2O3) semiconductor (p-Hg1-xCdxTe) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measurements. Observation of the SdH effect enables us to determine the dielectric constant of the oxide ( epsilon r=10.9+or-1.0) and provides evidence of two occupied subbands (i=0, 1) with an effective electron mass ratio m0/m1 approximately=2. From tilted magnetic field experiments an enhanced effective g-factor g*(x=0.3)=-65 in the lowest Landau level of the lowest subband was estimated. The maximum channel mobility mu max(4.2K)=3000 cm2 V-1 s-1 is limited by alloy inhomogeneities and interface roughness.

Journal

Semiconductor Science and Technology – IOP Publishing

Published: Jan 1, 1994

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