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A New Etching Solution System,  H 3 PO 4 ‐  H 2 O 2 ‐  H 2 O  , for GaAs and Its Kinetics

A New Etching Solution System,  H 3 PO 4 ‐  H 2 O 2 ‐  H 2 O  , for GaAs and Its Kinetics A new solution system consisting of , , and was found useful for etching wafers. This solution system can be divided into four regions a–d, according to etching characteristics. The boundaries between the regions are given by a mole ratio of to of about 2.3 and a mole fraction of of about 0.9 at room temperature. Rate‐limiting processes are: a, adsorption of (, ); b, diffusion of (, ); c, dissolution of oxidized products (, ); and d, adsorption of (,). Solutions in region a have a reproducible etching rate of 0.01–0.1 μm/min, which is useful for MESFET processing. Crystallographic etching is also available with solutions in region c. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of the Electrochemical Society IOP Publishing

A New Etching Solution System,  H 3 PO 4 ‐  H 2 O 2 ‐  H 2 O  , for GaAs and Its Kinetics

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Copyright
Copyright © 1978 ECS - The Electrochemical Society
ISSN
0013-4651
eISSN
1945-7111
DOI
10.1149/1.2131705
Publisher site
See Article on Publisher Site

Abstract

A new solution system consisting of , , and was found useful for etching wafers. This solution system can be divided into four regions a–d, according to etching characteristics. The boundaries between the regions are given by a mole ratio of to of about 2.3 and a mole fraction of of about 0.9 at room temperature. Rate‐limiting processes are: a, adsorption of (, ); b, diffusion of (, ); c, dissolution of oxidized products (, ); and d, adsorption of (,). Solutions in region a have a reproducible etching rate of 0.01–0.1 μm/min, which is useful for MESFET processing. Crystallographic etching is also available with solutions in region c.

Journal

Journal of the Electrochemical Society – IOP Publishing

Published: Sep 1, 1978

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