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- Publisher
- American Physical Society (APS)
- Copyright
- Copyright © 2009 The American Physical Society
- ISSN
- 1079-7114
- DOI
- 10.1103/PhysRevLett.102.256405
- pmid
- 19659105
- Publisher site
- See Article on Publisher Site
Abstract
It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2–0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed when an electric field ∼ 1 V / nm is applied, inducing a carrier density of about 10 13 cm - 2 . The magnitude of the band gap and the features observed in the infrared conductivity spectra are broadly compatible with calculations within a tight-binding model.
Journal
Physical Review Letters – American Physical Society (APS)
Published: Jun 26, 2009