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Clustering, precipitation and diffusion in ion-implanted silicon

Clustering, precipitation and diffusion in ion-implanted silicon A general approach to modelling implanted and diffused distributions of dopants in silicon is described, which includes the effects of clustering and precipitation. Using statistical analysis, the evolution of distribution types from ion as-implanted to annealed is followed and a dopant cluster distribution vector defined. Although general and non-specific, the model shows qualitatively many of the features observed in measured dopant distributions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Semiconductor Science and Technology IOP Publishing

Clustering, precipitation and diffusion in ion-implanted silicon

Semiconductor Science and Technology , Volume 9 (1) – Jan 1, 1994
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Copyright
Copyright © IOP Publishing Ltd
ISSN
0268-1242
eISSN
1361-6641
DOI
10.1088/0268-1242/9/1/002
Publisher site
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Abstract

A general approach to modelling implanted and diffused distributions of dopants in silicon is described, which includes the effects of clustering and precipitation. Using statistical analysis, the evolution of distribution types from ion as-implanted to annealed is followed and a dopant cluster distribution vector defined. Although general and non-specific, the model shows qualitatively many of the features observed in measured dopant distributions.

Journal

Semiconductor Science and Technology – IOP Publishing

Published: Jan 1, 1994

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