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Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe 2 /MoS 2 Dichalcogenide Heterojunction

Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe 2 /MoS 2 Dichalcogenide Heterojunction Mo‐based van der Waals heterojunction p–n diodes with p‐type α‐MoTe2 and n‐type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W–1, and an external quantum efficiency of 85% under blue‐light illumination. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Materials Wiley

Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe 2 /MoS 2 Dichalcogenide Heterojunction

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References (40)

Publisher
Wiley
Copyright
Copyright © 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0935-9648
eISSN
1521-4095
DOI
10.1002/adma.201504090
pmid
26924431
Publisher site
See Article on Publisher Site

Abstract

Mo‐based van der Waals heterojunction p–n diodes with p‐type α‐MoTe2 and n‐type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W–1, and an external quantum efficiency of 85% under blue‐light illumination.

Journal

Advanced MaterialsWiley

Published: Apr 1, 2016

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