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References (4)
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(1966)
Semiconductors and Semimetals vol 1 ed R K Willardson and A C Beer (New York Academic -
Transport and energy spectrum in zero-gap CdHgTe -
(1983)
The Properties and Applications of the Cd,Hg -
(1984)
The Physical Principles of zhe Semiconductors Infra: red Photoelectronics (Kiev: Naukova dumka) (in Russian
- Copyright
- Copyright © IOP Publishing Ltd
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- DOI
- 10.1088/0268-1242/9/1/004
- Publisher site
- See Article on Publisher Site
Abstract
A self-consistent calculation procedure of the temperature dependences of the Gamma 6- Gamma 8 energy gap (Eg) and charge carrier mobility is proposed for undoped Hg1-xCdxTe real crystals (x approximately 0.1). It is shown that, in combination with methods of direct determination of Eg, this method may be used later for investigation of the electron density of states in the Gamma 8 band degeneration region of zero-gap semiconductors. The mobility was calculated assuming a fourfold degenerate acceptor level in the conduction band with energy determined taking into account the features of the dielectric function under conditions of dynamic screening.
Journal
Semiconductor Science and Technology – IOP Publishing
Published: Jan 1, 1994