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- Copyright
- Copyright © IOP Publishing Ltd
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- DOI
- 10.1088/0268-1242/3/7/008
- Publisher site
- See Article on Publisher Site
Abstract
The complex bands of a range of GaAs/AlAs superlattices are calculated using empirical tight-binding (sp3s*) models of the corresponding bulk bands. The full complex band structure enables the percentage of the real bands to be clearly identified without there being any need to calculate the associated wavefunctions explicitly. The results show that mixing of Gamma and lowest X conduction bands is weak and that whereas the Gamma -related bands remain light and virtual-crystallike away from the new Brillouin zone boundaries, the X-related bands are both heavy and largely confined separately in the two materials of the superlattice. The results are discussed with reference to the use of such superlattices in HEMT devices.
Journal
Semiconductor Science and Technology – IOP Publishing
Published: Jul 1, 1988