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Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells

Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells We use an ensemble Monte Carlo technique to study the electron and phonon dynamics in a single quantum well of GaAs-AlGaAs under optical excitation. The cooling of the photoexcited quasi two-dimensional electron distribution is studied in the presence of a nonequilibrium longitudinal-optical phonon population and electron-electron interaction. It is found that the presence of hot phonons due to emission from the photoexcited carriers in the quantum well reduces the electron relaxation rate in qualitative agreement with available experimental results in such systems. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review Letters American Physical Society (APS)

Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells

Physical Review Letters , Volume 59 (6) – Aug 10, 1987
4 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1987 The American Physical Society
ISSN
1079-7114
DOI
10.1103/PhysRevLett.59.716
Publisher site
See Article on Publisher Site

Abstract

We use an ensemble Monte Carlo technique to study the electron and phonon dynamics in a single quantum well of GaAs-AlGaAs under optical excitation. The cooling of the photoexcited quasi two-dimensional electron distribution is studied in the presence of a nonequilibrium longitudinal-optical phonon population and electron-electron interaction. It is found that the presence of hot phonons due to emission from the photoexcited carriers in the quantum well reduces the electron relaxation rate in qualitative agreement with available experimental results in such systems.

Journal

Physical Review LettersAmerican Physical Society (APS)

Published: Aug 10, 1987

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