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- Publisher
- Wiley
- Copyright
- Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
- ISSN
- 0935-9648
- eISSN
- 1521-4095
- DOI
- 10.1002/adma.201102395
- pmid
- 21809400
- Publisher site
- See Article on Publisher Site
Abstract
A TiO2/VO2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
Journal
Advanced Materials – Wiley
Published: Sep 15, 2011