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References (8)
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- Copyright
- Copyright © IOP Publishing Ltd
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- DOI
- 10.1088/0268-1242/9/1/009
- Publisher site
- See Article on Publisher Site
Abstract
Au-Zn/Au and X/Au-Zn/Y/Au metallizations (where X=Au, Cr or Ni is a nucleation layer and Y=Cr or Ni is a diffusion barrier), formed by vacuum evaporation of Au-Zn (10 wt%) alloy, were studied for the preparation of ohmic contacts to p-type InP. The metallurgical and electrical properties of such contacts were investigated as a function of deposition parameters (especially the deposition rate of Au-Zn alloy) and alloying conditions. The role of the nucleation layer X on the InP surface and of the barrier layer Y between the Au-Zn and the outer Au layer in contact formation is also discussed.
Journal
Semiconductor Science and Technology – IOP Publishing
Published: Jan 1, 1994