Access the full text.
Sign up today, get DeepDyve free for 14 days.
Loading next page...
/lp/wiley/high-efficiency-p-i-n-organic-light-emitting-diodes-with-long-lifetime-t13WQR0K9m
References (19)
-
J. Blochwitz-Nimoth, J. Brandt, M. Hofmann, J. Birnstock, M. Pfeiffer, G. He, P. Wellmann, K. Leo (2004)
29.1: Full Color Active Matrix OLED Displays with High Aperture RatioSID Symposium Digest of Technical Papers, 35
-
M. Pfeiffer, S. Forrest, Xiang Zhou, K. Leo (2003)
A low drive voltage, transparent, metal-free n-i-p electrophosphorescent light emitting diodeOrganic Electronics, 4
-
(2004)
) . 10 G F He , M Pfeiffer , and K Leo -
C. Adachi, M. Baldo, S. Forrest, M. Thompson (2000)
High-efficiency organic electrophosphorescent devices with tris(2-phenylpyridine)iridium doped into electron-transporting materialsApplied Physics Letters, 77
-
B. D’Andrade, S. Forrest, A. Chwang (2003)
Operational stability of electrophosphorescent devices containing p and n doped transport layersApplied Physics Letters, 83
-
B. Maennig, M. Pfeiffer, A. Nollau, Xiang Zhou, K. Leo, P. Simon (2001)
Controlled p-type doping of polycrystalline and amorphous organic layers: Self-consistent description of conductivity and field-effect mobility by a microscopic percolation modelPhysical Review B, 64
-
M. Baldo, D. O'brien, Yujian You, A. Shoustikov, S. Sibley, S. Sibley, M. Thompson, S. Forrest (1998)
Highly efficient phosphorescent emission from organic electroluminescent devicesNature, 395
-
C. Bradford, C. O'Donnell, B. Urbaszek, K. Prior, B. Cavenett (2001)
MgS and MgS/ZnSe quantum wells: growth by molecular beam epitaxy and excitonic propertiesPhysical Review B, 64
-
C. Tang, S. Vanslyke (1987)
Organic Electroluminescent DiodesApplied Physics Letters, 51
-
Xiang Zhou, D. Qin, M. Pfeiffer, J. Blochwitz-Nimoth, A. Werner, J. Drechsel, B. Maennig, K. Leo, M. Bold, P. Erk, H. Hartmann (2002)
High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layersApplied Physics Letters, 81
-
G. He, O. Schneider, D. Qin, Xiang Zhou, M. Pfeiffer, K. Leo (2004)
Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junctionJournal of Applied Physics, 95
-
G. He, M. Pfeiffer, K. Leo, M. Hofmann, J. Birnstock, Robert Pudzich, J. Salbeck (2004)
High-efficiency and low-voltage p‐i‐n electrophosphorescent organic light-emitting diodes with double-emission layersApplied Physics Letters, 85
-
(1988)
Diplomphysiker degree from the University of Freiburg in 1985, working with Adolf Goetzberger at the Fraunhofer-Institut für Solare Energiesysteme -
M. Pfeiffer, S. Forrest, K. Leo, M. Thompson (2002)
Electrophosphorescent p–i–n Organic Light‐Emitting Devices for Very‐High‐Efficiency Flat‐Panel DisplaysAdvanced Materials, 14
-
Jingsong Huang, M. Pfeiffer, A. Werner, J. Blochwitz, K. Leo, Shiyong Liu (2002)
Low-voltage organic electroluminescent devices using pin structuresApplied Physics Letters, 80
-
J. Kido, T. Matsumoto (1998)
Bright organic electroluminescent devices having a metal-doped electron-injecting layerApplied Physics Letters, 73
-
H. Aziz, Z. Popović, N. Hu (2002)
Organic light emitting devices with enhanced operational stability at elevated temperaturesApplied Physics Letters, 81
-
C. Adachi, M. Baldo, M. Thompson, S. Forrest (2001)
Nearly 100% internal phosphorescence efficiency in an organic light emitting deviceJournal of Applied Physics, 90
-
R. Kwong, M. Weaver, M. Lu, Y. Tung, A. Chwang, T. Zhou, M. Hack, Julie Brown (2003)
Current status of electrophosphorescent device stabilityOrganic Electronics, 4
- Publisher
- Wiley
- Copyright
- 2005 Society for Information Display
- ISSN
- 1071-0922
- eISSN
- 1938-3657
- DOI
- 10.1889/1.1927730
- Publisher site
- See Article on Publisher Site
Abstract
Abstract— High‐performance organic light‐emitting diodes (OLEDs) are promoting future applications of solid‐state lighting and flat‐panel displays. We demonstrate here that the performance demands for OLEDs are met by the PIN (p‐doped hole‐transport layer/intrinsically conductive emission layer/n‐doped electron‐transport layer) approach. This approach enables high current efficiency, low driving voltage, as well as long OLED lifetimes. Data on very‐high‐efficiency diodes (power efficiencies exceeding 70 lm/W) incorporating a double‐emission layer, comprised of two bipolar layers doped with tris(phenylpyridine)iridium (Ir(ppy)3), into the PIN architecture are shown. Lifetimes of more than 220,000 hours at a brightness of 150 cd/m2 are reported for a red PIN diode. The PIN approach further allows the integration of highly efficient top‐emitting diodes on a wide range of substrates. This is an important factor, especially for display applications where the compatibility of PIN OLEDs with various kinds of substrates is a key advantage. The PIN concept is very compatible with different backplanes, including passive‐matrix substrates as well as active‐matrix substrates on low‐temperature polysilicon (LTPS) or, in particular, amorphous silicon (a‐Si).
Journal
Journal of the Society for Information Display – Wiley
Published: May 1, 2005