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Persistent photoconductivity in two-dimensional Mo1−xWxSe2–MoSe2 van der Waals heterojunctions

Persistent photoconductivity in two-dimensional Mo1−xWxSe2–MoSe2 van der Waals heterojunctions Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional layered semiconductors, especially the transition metal dichalcogenides (TMDs), show novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1− xWxSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with strong interlayer coupling as proven in photoluminescence and low-frequency Raman spectroscopy measurements. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. These measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Research Springer Journals

Persistent photoconductivity in two-dimensional Mo1−xWxSe2–MoSe2 van der Waals heterojunctions

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References (29)

Publisher
Springer Journals
Copyright
Copyright © The Materials Research Society 2016
ISSN
0884-2914
eISSN
2044-5326
DOI
10.1557/jmr.2016.35
Publisher site
See Article on Publisher Site

Abstract

Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional layered semiconductors, especially the transition metal dichalcogenides (TMDs), show novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1− xWxSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with strong interlayer coupling as proven in photoluminescence and low-frequency Raman spectroscopy measurements. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. These measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.

Journal

Journal of Materials ResearchSpringer Journals

Published: Apr 1, 2016

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