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Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET). Due to the uniform doping (concentration range is 1 × 1018 cm−3-1 × 1019 cm−3) in Conv. JL DG MOSFET, the contact resistance at source and drain region is large which degrades the performance of devices. The increment in doping of source and drain region reduces the contact resistance but simultaneously it increases leakage in Conv. JL DG MOSFET. To address above mentioned issues, a new architecture has been discussed which is called Core-Shell Channel (CSC) JL DG MOSFET. The CSC JL DG MOSFET is offering low leakage current with highly doped concentration of impurity in source and drain. The first time electrostatic discharge (ESD) reliability investigation has been done for any JL MOSFET and CSC JL DG MOSFET. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Silicon Springer Journals

Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

Ajay,
Silicon , Volume 13 (5) – May 28, 2020
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References (17)

Publisher
Springer Journals
Copyright
Copyright © Springer Nature B.V. 2020
ISSN
1876-990X
eISSN
1876-9918
DOI
10.1007/s12633-020-00527-w
Publisher site
See Article on Publisher Site

Abstract

In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET). Due to the uniform doping (concentration range is 1 × 1018 cm−3-1 × 1019 cm−3) in Conv. JL DG MOSFET, the contact resistance at source and drain region is large which degrades the performance of devices. The increment in doping of source and drain region reduces the contact resistance but simultaneously it increases leakage in Conv. JL DG MOSFET. To address above mentioned issues, a new architecture has been discussed which is called Core-Shell Channel (CSC) JL DG MOSFET. The CSC JL DG MOSFET is offering low leakage current with highly doped concentration of impurity in source and drain. The first time electrostatic discharge (ESD) reliability investigation has been done for any JL MOSFET and CSC JL DG MOSFET.

Journal

Silicon – Springer Journals

Published: May 28, 2020

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